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| Preliminary Product Description The XD010-04S-D4F 10W power module is a robust broadband 2-stage Class A/AB amplifier, suitable for use as a power amplifier driver or output stage. It is a drop-in, no-tune, solution for high power applications requiring high efficiency, excellent linearity, and unit to unit repeatability. Internal bias current compensation ensures stable performance over a wide temperature range. Functional Block Diagram Stage 1 RF In Stage 2 RF Out VD1 VD2 XD010-04S-D4F 350-600 MHz Class AB 10W Power Amplifier Module Product Features * * * * * * 50 W RF Impedance > 10W Output P1dB Single Voltage Operation High Gain: 32 dB Typical Temperature Compensation Robust 8000V ESD (HBM), Class 3B DTV Public Service Wireless Infrastructure Military CDMA or GSM 1 2 3 4 Case Flange = Ground * * * * * Applications Key Specifications Parameter Frequency P1dB Gain Gain Flatness IRL Efficiency Linearity Delay Phase Linearity Test Conditions: Zin = Zout = 50, VD = 28.0V, ID1 = 230mA, = 150mA, TFlange = 25C Frequency of Operation Output Power at 1dB Compression, 450MHz Gain at 10W Output Power, 450MHz Peak to Peak Gain Variation, 350 - 600MHz Input Return Loss 1W Output Power, 350 - 600MHz Drain Efficiency at 10W CW, 350-600MHz 3rd Order IMD at 10W PEP (Two Tone), 450MHz & 451MHz Signal Delay from Pin 1 to Pin 4 Deviation from Linear Phase (Peak to Peak) ID2 Unit MHz W dB dB dB % dBc nS Deg Min. 350 30 10 26 Typ. 12 32 1.0 15 30 -32 2.5 0.5 Max. 600 2.0 -28 - Quality Specifications Parameter ESD Rating MTTF RTH, j-l RTH, j-2 Human Body Model, JEDEC Document - JESD22-A114-B 85oC Baseplate, 200oC Channel Thermal Resistance Stage 1 (Junction to Case) Thermal Resistance Stage 2 (Junction to Case) Unit V H C/W C/W Min 8000 - Typical 1.2 X 106 11 4 Max - - The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc. All worldwide rights reserved. 303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-104259 Rev B Preliminary XD010-04S-D4F 350-600 MHz 10W Amp Pin Description Pin # 1 2 3 4 Flange Function RF Input VD1 VD2 RF Output Gnd 1st stage bias 2nd stage bias. Integrated temperature compensation maintains constant current over the operating temperature range. See Note 1. Internally connected to DC ground. Do not apply DC voltages to the RF leads. Baseplate provides electrical ground and a thermal transfer path for the device. Proper mounting assures optimal performance and the highest reliablility. See Sirenza applications note: AN-060 Installation Instructions for XD Module Series. Comments Internally connected to DC ground. Do not apply DC voltages to the RF leads. Simplified Device Schematic 2 VD1 3 VD2 Temperature Compensation Bias Network RF in 1 Q1 Q2 RF out 4 Case Flange = Ground Absolute Maximum Ratings Parameters 1st Stage Bias Voltage (VD1 ) 2nd Stage Bias Voltage (VD2) RF Input Power Load VSWR for Continuous Operation Without Damage Device Channel Temperature Lead Temperature During Solder Reflow Operating Temperature Range Storage Temperature Range Value 35 35 +20 5:1 +200 +210 -20 to +90 -40 to +100 Unit V V dBm VSWR C C C C Note 1: The internally generated gate voltage is thermally compensated to maintain constant drain quiescent current over the temperature range listed in the data sheet. No compensation is provided for gain changes with temperature. This can only be provided with an external AGC circuit. Note 2: Internal RF decoupling is included on all bias leads. No additional bypass elements are required, however some applications may require energy storage on the VD leads to accommodate modulated signals. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation refer to the key specifications table on the first page of the datasheet. Caution: ESD Sensitive Appropriate precautions in handling, packaging and testing devices must be observed. 303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-104259 Rev B Preliminary XD010-04S-D4F 350-600 MHz 10W Amp Test Board Schematic with module attachments shown Test Board Layout and Bill of Materials Component PCB J1, J2 J3 C1, C2 C4, C6 C3, C5 Mounting Screws Description Rogers 4350, er=3.5 Thickness=30mils SMA, RF, PCB Mount Tab W / Flange MTA Post Header, 6 Pin, Rectangle, Polarized, Surface Mount Cap, 10mF 50V, 10%, Tant, D Cap, 0.01mF, 100V, 10%, 1206 Cap, 1000pF, 100V, 10%, 1206 4-40 X 0.250" Manufacturer Rogers Johnson AMP Kemet Johanson Johanson Various Gerber files, DXF drawings, a detailed BOM, and assembly recommendations for the test board with fixture are available from Sirenza applications. 303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-104259 Rev B |
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